The defect complex formation reactions in semiconductors has been considerated. The contribution of the electron subsystem of crystals into the reaction rate was regarded as an addition of the change in the electron subsystem energy to the reaction energy barrier. The weighing up of the results calculated against the experimental data was carried out in the case of the accumulation of the radiation-induced A- and E-centers in silicon.
Satisfactory agreement between theoretical and experimental results gives evidence in favour of the suggested mechanism that the crystal electron subsystem exerts influence over processes in the atomic subsystem.
Физика и техника полупроводников, 2000, том 34, вып.