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Редактор В.В.Чалдышев Self-compensation of CdTe Cl under phase equilibrium conditions in a crystal-gas (cadmium, tellurium) system O.A. Matveev, A.I. Terent’ev A.F.Ioffe Physico-technical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia


The investigation of self-compensation of charged point defects down to extremely low carrier density (ni, pi) has been carried out on CdTe Cl for the whole interval of variations in PCd and PTe vapor pressure in crystal — gas equilibrium under annealing condition. It was found that electron concentration n from 107 cm-3 to 1014 cm-3 increased with PTe from Pmin to saturation of CdTe Te under crystal annealing condition, PTebeing controlled. The result could be explained by forming an antisite intrinsic point defect, TeCd. Its appearance in the crystal leads to decreasing Cd vacancies concentration that violates a precise self-compensation mechanism in CdTe Cl and results in obtaining low resistivity crystals of n-type conductivity. Data obtained on p(n) concentration as a function of PTe2 allowed us to plot a curve of n-ni-pi-n versus PCd and PTe changes, which presents the state of point defects in CdTe Cl. The method used for crystal annealing in a two-phase gas-crystal equilibrium made it possible to realize a reversible inversion of ni-pi conductivity in the crystal.

3 Физика и техника полупроводников, 1998, том 32, №

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