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.. Deep level centers in silicon carbide A.A. Lebedev A.F. Ioffe Physicotechnical Institute Russian Academy of Science, 194021 St.Petersburg, Russia

Abstract

In this work a review of current results on investigation of deep center parameters in 6H-, 4H- and 3C-SiC has been done.

Presented are data on the ionization energy and the capture crosssection of centers arising after doping SiC by different impurites (or radiation doping) and on intrinsic defects, as well. Participation of observed centers in processes of radiative and nonradiative recombination is discussed. An analysis has been performed that shows a strong influence of intrinsic defects of SiC crystalline lattice on formation of deep centers and also on properties of epilayers:

their doping level and the polytype homogeneity.

, 1999, 33, .

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