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Using the voltage-capacitance characteristics method, the concentration profiles of Si that was implanted in monocrystal and epitaxial GaAs after fast thermal annealing (FTA) (825, 870, 950C, 12 s) have been studied; using Van-der-Paw method, the electron Hall mobility temperature dependence in the range of 70 400 K has been measured. Unlike thermal annealing (800C, 30 min), the silicon diffusion redistribution deep into GaAs is shown to occur for both types of material. The coefficient of diffusion of Si in the single crystal is 2 times greater, but the electrical activation efficiency is somewhat less than in the epitaxial GaAs for each of the temperatures of FTA. The activation energies for D and processes are less than similar values under TA. The µ(T ) analysis demonstrates the absence or any noticeable lowering of complementary electron scattering centers that were identified as defect complexes.

Физика и техника полупроводников, 2000, том 34, вып.

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