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.. Molecular beam epitaxy growth and photoluminescence properties of InAsSb / AlSbAs quantum wells V.A. Solovev, Ya.V. Terentev, A.A. Toropov, B.Ya. Meltser, A.N. Semenov, A.A. Sitnikova, S.V. Ivanov, J.R. Meyer, P.S. Kopev Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia Naval Research Laboratory, Washington, DC 20375 USA


Heterostructures with a single InAs1-x Sbx / AlSb1-y Asy quantum well (QW) subjected to compressive stress have been grown by molecular beam epitaxy on GaSb (001) substrates and studied by x-ray diffraction, transmission electron microscopy and photoluminescence (PL) spectroscopy. An intense PL with the peak wavelenght ranging from 2 to 4.5 m (FWHM is of 30-50 meV) as the QW width varies from 4 to 20 nm, respectively, has been observed at 80 K. The band gap energies of the InAsSb / AlSbAs QWs calculated over wide ranges of x and y alloy compositions in the effective mass approximation, stresses concentrated in the QW and barriers being into account, are in good agreement with experimental values.

, 2002, 36, .

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