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.. Ultraviolet semiconductor photoelectroconvertors T.V. Blank, Yu.A. Goldberg Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia Abstract In recent years, the ultraviolet photoelectronics has been formed in accordance with requirements of medicine, biology, military technologies and the ozone hole problem.

Peculiar to it is detection of very weak signals, of which the influence on human life is very serions, against a background of powerful visible and infrared radiation. The base of the UV photoelectronics are semiconductor photoelectroconventors: Si p-n structures, GaP Schottky barriers, GaN and AlGaN Schottky barriers and p-n structures (solarblind devices), SiC structures with potential barriers (hightemperature devices), ZnO and ZnS photoconductive cells and Schottky diodes.

Parameters of original wide-bandgap semiconductors, principals of ohmic contacts, device characteristics, and probable further research directions are being discussed in this review.

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