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Редактор Л.В. Беляков Low Temperature materials and Thin Film Transistors for Flexible Electronics A. Sazonov, M. Meitine,+, D. Striakhilev, A. Nathan Electrical and Computer Engineering Department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada + ATI Technologies Inc., L3T 7XG Ontario, Canada

Abstract

This paper deals with the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of electronic devices on mechanically flexible plastic foils. Device quality amorphous hydrogenated silicon (a-Si : H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiNx) films and thin film transistors (TFTs) were fabricated using existing industrial plasma deposition equipment at the process tempertures as low as 75C and 120C. The a-Si : H TFTs fabricated perform similarly to their high temperature counterparts.

Физика и техника полупроводников, 2006, том 40, вып.

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