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[7] Ю.И. Равич, Б.А. Ефимова, Л.В. Прокофьева, И.Н. Дубровская. ФТП, 4, 230 (1970) (аннотация), рукопись деп. в ВИНИТИ № 930/69.

[8] В.И. Кайданов, С.А. Немов, Ю.И. Равич. ФТП, 26, (1992).

Редактор Т.А. Полянская Donor action of rare-earth metals in PbTe G.T. Alekseeva, M.V. Vedernikov, E.A. Gurieva, P.P. Konstantinov, L.V. Prokof’eva, Yu.I. Ravich A.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia State Technical University, 195251 St.Petersburg, Russia


Hall coefficient, thermoelectric power and electroconductivity within temperature range 77–700 K have been studied in PbTe doped with La, Pr, Sm, and Gd. The impurity atoms display the donor action depending on temperature T. The share of the electroactive impurity atoms grows with increasing temperature and reaches the values which are close or a little over a half of their total concentration. It has been also observed a decrease of the electron mobility alongside with changes in the thermopower as compared with appropriate values in PbTe I. The absolute values of thermopower in PbTe with rare-earth metal atoms appear to be higher at low T and lower at high T than those in PbTe I. The data obtained are interpreted taking into account a band of resonance impuruty states, their energy and density being determined by the material composition and temperature. From the exepimental data follows that in PbTe with La and Pr, introduced as LaTe and PrTe, the intrinsic donor-type defects play a significant role.

Физика и техника полупроводников, 1998, том 32, №

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