W. Xu, F.M. Peeters, J.T. Devreese. Phys. Rev. B, 48, (1993).
 J. Pozela, V. Jucien, A. Namajnas, K. Pozela. J. Appl. Phys., 81, 1775 (1997).
Редактор Т.А. Полянская Electron mobility in a AlGaAs / GaAs / AlGaAs quantum well V.G. Mokerov, G.B. Galiev, J. Pozela, K. Pozela, V. Juciene Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 103907 Moscow, Russia Semiconductor Physics Institute, 2600 Vilnius, Lithuania
The electron mobility oscillating has been observed alongside with the change in the thickness of the quantum well (QW) AlGaAs / GaAs AlGaAs due to modulating double doping.
/ A steep drop of the mobility as a function of the electron density in the QW has been found. Conditions for the mobility increase, as the thin barrier is being incorporated into the QW, have been formulated. It is 1.3 times mobility increase that has been experimentally observed for the first time throughout the incorporation of 1–1.5 nm AlAs barrier in the QW of L = 26 nm thickness.
Физика и техника полупроводников, 2002, том 36, вып.