Influence of -radiations on structural changes in transistor multilayer AlGaAs/InGaAs/GaAs heterostructures has been investigated. With the help of X-ray diffraction measurements and through electronic microscopy it was found that the -irradiation with a doze is higher then 3 · 107 rad results in destruction of GaAs layer on the surface of the structure. At a doze of irradiation 108 rad the roughness of the surface becomes considerably higher and reaches several nanometers. In addition, under influence of the -irradiation, the formation of dislocations is observed in the cap layer of the structure. The reason of such behavior of the cap layer can be related with the existence of oxide layer of on its free surface and an opportunity of chemical reactions, induced by the -irradiation, between atoms of a layer and free radicals formed in oxide and a surrounding atmosphere. There are no appreciable changes of the structure of thin InGaAs channel layer and its composition at dozes up to 108 rad.
Физика и техника полупроводников, 2006, том 40, вып.