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Properties of self-organized SiGe quantum dots that have been for the first time formed by the method of ion implantation, and studied using methods of Auger-electronic spectroscopy, atomic-force and electron microscopy. The spatial correlated distribution of germanium atoms has been found in the implanted layers after their annealing, outcome of that becoming the formation of nanometer areas enriched with germanium, in which Ge concentrations by 10-12 percent higher than in an ambient matrix of SiGe solid solution. The optical properties of SiGe layers with SiGe quantum dots have been investigated using methods of the Raman spectroscopy and photoluminescence (PL).

The intensive PL signal in the wavelength region of 1.54-1.microns is detected at room temperature.

Физика и техника полупроводников, 2004, том 38, вып.

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