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Редактор Л.В. Шаронова Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a semiconductor/electrolyte system I.A. Karpovich, A.P. Gorshkov, S.B. Levichev, S.V. Morozov, B.N. Zvonkov, D.O. Filatov University of Nizhny Novgorod, 603600 Nizhny Novgorod, Russia

Abstract

The photovoltaic effect in the semiconductor/electrolyte transition is a method for investigation of the energy spectrum in the heterostructures with self-assembled InAs/GaAs quantum dots. High sensitivity allowing to measure the photoelectric spectra of quantum dots with high barriers for emission both electrons and holes from quantum dots to matrix and with low surface density (as low as 109 cm-2) is obviously an important advantage of the method. Broadening of the optical transition lines and emission of the electrons and holes from the quantum dots to the GaAs matrix throught the excited states occur at a high transverse electric field. The photovoltage sign change at high direct bias of the semiconductor/electrolyte barrier has been observed and explained by formation of a positive charge of the cladding layer/electrolyte interface and a negative charge in the quantum dot layer.

Физика и техника полупроводников, 2001, том 35, вып.

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