The temperature dependence of the short-wave photoeffect quantum efficiency of GaAs surface barrier structures has been studied in the temperature range 78 300 K and photon energy range 1.8 4.7eV.
It has been experimentally shown that the quantum efficiency increases with timperature; the temperature dependence gains saturation at high temperatures.
The model based on the concept of potential fluctuation traps inside the space charge layer has been proposed for the explanation of the quantum efficiency increase with temperature. This model fits experimental data rather good and allows to separate the temperature and the photon energy dependencies of the quantum efficiency. In other words, this model gives explicitly the temperature dependence of the quantum efficiency.
Рис. 3. Зависимость ln от 1/T : сравнение теории с экспериментом. Энергия фотона h, эВ: 1 —1.8, 2 — 4.11, 3 — 4.18, 4 — 4.68.
Физика и техника полупроводников, 1997, том 31, №