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exceeding the boron activation energy; the value does not depend  C.G. Van de Walle, R.M. Martin. Phys. Rev. B, 34, on the photoexcitation intensity (at > 1013 photon/cm2 · c), (1986).
being at low temperatures close to the activation energy of hopping  J.M. Bass, C.C. Matthai. Semicond. Sci. Technol., 5, conductivity 3 for the active layer.
 L. Colombo, R. Resta, S. Baroni. Phys. Rev. B, 44, 5572 Photovoltaic effect was explaned in terms of the ballistic (1991).
transport of holes that were photoemitted from the contact through  Е.Б. Гольдгур, Р.И. Рабинович. ЖЭТФ, 84, 1109 (1983).
blocking layer and subsequenty cooled in the active layer. Presence  V.N. Abakumov, V.I. Perel, I.N. Yassievich. Nonradiative of a potential barrier ( 3) due to active-to-blocking layer Recombination in Semiconductors (North-Holland, Amsterinterface was also taken into account. The study makes it possible dam, Oxford, N. Y., Tokyo, 1991).
to suggest a model for description of main regularities of the  С. Зи. Физика полупроводниковых приборов (М., Мир, photo-e.m.f. behaviour depending on temperature, intensity, and 1984) т. 2, приложение.
the photon energy has been developed.
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Редактор В.В. Чалдышев Физика и техника полупроводников, 1999, том 33, вып.