We use resonant magneto-tunnelling spectroscopy to probe the band structure of electrons in the quantum well of a resonant tunnelling diode. A magnetic field, B, is applied perpendicular to the tunnelling direction. By monitoring the amplitude and voltage position of the resonant tunnelling peak corresponding to the ground electronic state as a function of B, we are able to observe an axial anisotropy in both quantities.
Consistent with earlier work, the axis of the anisotropy rotates by 90 on reversing the bias direction, as a result of interface band mixing. However, the incorporation of a narrow InAs layer in the quantum well allows us to modify the shape of the ground, electronic wave function and hence control the form of the anisotropy.
Физика и техника полупроводников, 2005, том 39, вып.