The behaviour of the absorption coefficient spectra ( ) in the fundamental edge region of a-Si / ZrOx multilayer nanostructures prepared by evaporation with a thickness of a-Si layers from 10 to 3 nm have been investigated. The number of periods in the structures has been varied from 7 to 14. The periodicity has been controlled using small-angle x-ray diffraction and scanning probe microscopy. The regions of linear dependence = f ( ) and the increasing of effective optical gap for a-Si layer thickness 5 nm has been found. The result is explained as a quantum-size effect.
7 Физика и техника полупроводников, 2000, том 34, вып.